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Chip Infrared LED With Right Angle Lens
SIR12-21C/TR8
Features
? Small double-end package
? Low forward voltage
? Good spectral matching to Si photo detector
? Package in 8mm tape on 7” diameter reel
? Pb free
? The product itself will remain within RoHS compliant version.
Descriptions
SIR12-21C/TR8 is an infrared emitting diode in miniature
SMD package molded in a water clear plastic with right
angle lens.
The device is spectrally matched with silicon photodiode and
phototransistor.
Applications
? Household Appliances
? Electric Appliances
? Smoke detector
? Floppy disk drive
Device Selection Guide
Part Category
SIR
Chip
Material
GaAlAs
Lens Color
Water clear
1
Copyright @2013.Everlight All rights reserved .Release data:6/24/2013. Issue No:DIR-0000980. Rev.3
www.everlight.com
Revision
:3
Release Date:2013-07-05 13:49:39.0
LifecyclePhase:
Expired Period: Forever
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相关代理商/技术参数
SIR12-21C-TR8 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:Chip Infrared LED With Right Angle Lens
SIR15-21C 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:Chip LED(1.1mm Height)
SIR15-21C/TR8 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:Chip LED(1.1mm Height)
SIR158DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SIR158DP-T1-GE3 功能描述:MOSFET 30V 60A 83W 1.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR164DP-T1-GE3 功能描述:MOSFET 30V 50A 69W 2.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR166DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SIR166DP-T1-GE3 功能描述:MOSFET 30V 40A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube